, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 BF256A/bf256b/bf256c n-channel rf amplifiers ? this device is designed for vhf/uhf amplifiers. ? sourced from process 50. *' 1 to-92 lgate 2. source 3. drain absolute maximum ratings ta=25c unless otherwise noted symbol vdg vgs igf pd tstg parameter drain-gate voltage gate-source voltage forward gate current total device dissipation @ta=25c derate above 25c operating and storage temperature range value 30 -30 10 350 2.8 -55 - 150 units v v ma mw mw/c c electrical characteristics ta=25c unless otherwise noted symbol parameter test condition min. max unte off characteristics v(8r)gss vgs vgs(off) igss gate-source breakdown voltage gate-source gate-source cutoff voltage gate reverse current vds = 0. !g=1ua vds = 15v,ld = 200na vds=15v, !d = 10na vgs = -20v, vgs = 0 -30 -0.5 -0.5 -7.5 -8 -5 v v v na on characteristics toss zero-gate voltage drain current BF256A bf256b bf256c vgs = 15v, vgs = 0 3 6 11 7 13 18 ma small signal characteristics gfs common source forward transconductance vds = 15v, vgs = 0, f= 1khz 4.5 mmhos n.i .semi-conductors reserves the right to change test conditions, parameter limit* .md package dimensions without notice inrbrmution lumished by nj semi-conductors it believed to he hoth uccurnlc nml reliable ,h the linw of guing to press. however vi semi?(, iiiijutlor* .bmiincs no resptiiuibility for ;my ermrs i'r uiniuiuiis discovered in its use nj semi-condtuh.rs cn<;our:)?? ... r. .i...r. 1.^ i ..ril\h ii .l?l.v-h....td ,.^ ..timinl hl*^r?* illfll'illu .inform
to-92 0.46 0.10 1.27typ [1.27 0.20] 1.27typ [1.27 0.20] n ,? +0.10 0. j8 -0.05 3.60 0.20 (r2.29)
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